超聲探傷儀、超聲波探頭、測試塊和耦合劑等是超聲檢測系統的重要組成部分。超聲波檢測的主要設備是超聲波探傷儀,它可以快速、方便、無損傷地檢測、定位、評估和診斷工件中的各種缺陷。由于超聲波探頭可實現電聲轉換,所以超聲波探頭也叫超聲波換能器,其電聲轉換是可逆的,且轉換時間極短,可以忽略不計。根據超聲波的產生方式和電聲轉換的不同,超聲波換能器有很多種。這些電聲轉換方式有:利用某些金屬(鐵磁性材料)在交變磁場中的磁致伸縮,產生和接收超聲波;利用電磁感應原理產生電磁超聲以及利用機械振動、熱效應和靜電法等都能產生和接收超聲波,利用壓電效應原理制成的壓電材料是目前用得最多的超聲換能器。
1. 壓電效應
有(you)一種(zhong)晶(jing)體(ti),當受到擠壓(ya)或者拉伸(shen)作用(yong)(yong)力(li)的(de)(de)(de)時(shi)(shi)候,產(chan)(chan)生(sheng)形(xing)變,使得其中(zhong)的(de)(de)(de)帶電(dian)(dian)(dian)(dian)(dian)質點(dian)發生(sheng)相對(dui)位移(yi),因此(ci)大(da)小相等極性相反的(de)(de)(de)正(zheng)(zheng)(zheng)電(dian)(dian)(dian)(dian)(dian)荷和負電(dian)(dian)(dian)(dian)(dian)荷會出(chu)現(xian)在晶(jing)體(ti)表面,然后在兩端產(chan)(chan)生(sheng)不(bu)同的(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)荷,此(ci)時(shi)(shi)晶(jing)體(ti)將處于帶電(dian)(dian)(dian)(dian)(dian)狀(zhuang)態,并且由作用(yong)(yong)力(li)產(chan)(chan)生(sheng)的(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)荷量與作用(yong)(yong)力(li)的(de)(de)(de)大(da)小成(cheng)正(zheng)(zheng)(zheng)比;當作用(yong)(yong)力(li)撤去之后,晶(jing)體(ti)恢復(fu)到它的(de)(de)(de)中(zhong)性狀(zhuang)態,這種(zhong)現(xian)象(xiang)(xiang)被(bei)稱作正(zheng)(zheng)(zheng)壓(ya)電(dian)(dian)(dian)(dian)(dian)效(xiao)(xiao)應(ying)(ying)(ying)。當此(ci)類(lei)晶(jing)體(ti)處于電(dian)(dian)(dian)(dian)(dian)場中(zhong)時(shi)(shi),晶(jing)體(ti)會沿一定(ding)的(de)(de)(de)方(fang)向(xiang)產(chan)(chan)生(sheng)機械形(xing)變;電(dian)(dian)(dian)(dian)(dian)場撤去之后形(xing)變消(xiao)失,晶(jing)體(ti)恢復(fu)原狀(zhuang),這種(zhong)現(xian)象(xiang)(xiang)被(bei)稱為逆(ni)壓(ya)電(dian)(dian)(dian)(dian)(dian)效(xiao)(xiao)應(ying)(ying)(ying)或電(dian)(dian)(dian)(dian)(dian)致伸(shen)縮效(xiao)(xiao)應(ying)(ying)(ying)。正(zheng)(zheng)(zheng)壓(ya)電(dian)(dian)(dian)(dian)(dian)效(xiao)(xiao)應(ying)(ying)(ying)與逆(ni)壓(ya)電(dian)(dian)(dian)(dian)(dian)效(xiao)(xiao)應(ying)(ying)(ying)被(bei)統稱為壓(ya)電(dian)(dian)(dian)(dian)(dian)效(xiao)(xiao)應(ying)(ying)(ying),如(ru)圖3.1所(suo)示。這種(zhong)物理現(xian)象(xiang)(xiang)在1880年被(bei)居里兄(xiong)弟發現(xian),正(zheng)(zheng)(zheng)是由于這種(zhong)現(xian)象(xiang)(xiang),壓(ya)電(dian)(dian)(dian)(dian)(dian)晶(jing)體(ti)被(bei)廣泛應(ying)(ying)(ying)用(yong)(yong)于產(chan)(chan)生(sheng)超聲波的(de)(de)(de)晶(jing)體(ti)振蕩器。

壓(ya)(ya)(ya)電(dian)(dian)(dian)效(xiao)應的原(yuan)理是,如果對壓(ya)(ya)(ya)電(dian)(dian)(dian)材料(liao)施加壓(ya)(ya)(ya)力,就會(hui)產(chan)(chan)生(sheng)電(dian)(dian)(dian)位差(稱(cheng)(cheng)為正壓(ya)(ya)(ya)電(dian)(dian)(dian)效(xiao)應),反之施加電(dian)(dian)(dian)壓(ya)(ya)(ya)時,會(hui)產(chan)(chan)生(sheng)機(ji)械(xie)(xie)(xie)應力(稱(cheng)(cheng)為逆壓(ya)(ya)(ya)電(dian)(dian)(dian)效(xiao)應)。如果壓(ya)(ya)(ya)力是高(gao)(gao)頻振動(dong),就會(hui)產(chan)(chan)生(sheng)高(gao)(gao)頻電(dian)(dian)(dian)流(liu)。當高(gao)(gao)頻電(dian)(dian)(dian)信號(hao)應用于壓(ya)(ya)(ya)電(dian)(dian)(dian)陶瓷上時,會(hui)產(chan)(chan)生(sheng)高(gao)(gao)頻聲信號(hao)(機(ji)械(xie)(xie)(xie)振動(dong)),通常(chang)稱(cheng)(cheng)為超聲信號(hao)。也就是說,壓(ya)(ya)(ya)電(dian)(dian)(dian)晶片可以因機(ji)械(xie)(xie)(xie)形變產(chan)(chan)生(sheng)電(dian)(dian)(dian)場,也可以因電(dian)(dian)(dian)場的作用產(chan)(chan)生(sheng)機(ji)械(xie)(xie)(xie)形變,實現(xian)機(ji)械(xie)(xie)(xie)能與(yu)電(dian)(dian)(dian)能之間的轉換和逆轉換,這(zhe)種內在的機(ji)電(dian)(dian)(dian)耦(ou)合效(xiao)應使得壓(ya)(ya)(ya)電(dian)(dian)(dian)晶體在工程中得到了廣泛的應用。
2. 壓電晶體(ti)
在機械(xie)力(li)的(de)(de)(de)(de)(de)作用下,產生(sheng)形變,使(shi)帶(dai)電(dian)粒(li)子(zi)具有(you)相對(dui)位移,使(shi)晶(jing)(jing)(jing)體(ti)表面具有(you)正負束(shu)縛(fu)電(dian)荷,這(zhe)樣的(de)(de)(de)(de)(de)晶(jing)(jing)(jing)體(ti)叫作壓電(dian)晶(jing)(jing)(jing)體(ti)。壓電(dian)晶(jing)(jing)(jing)體(ti)極軸兩端(duan)產生(sheng)的(de)(de)(de)(de)(de)電(dian)勢差的(de)(de)(de)(de)(de)性質稱(cheng)為(wei)壓電(dian)特性。分(fen)為(wei)單晶(jing)(jing)(jing)體(ti)與(yu)多(duo)(duo)(duo)(duo)晶(jing)(jing)(jing)體(ti),其中(zhong)多(duo)(duo)(duo)(duo)晶(jing)(jing)(jing)體(ti)材(cai)料(liao)(liao)(liao)又(you)稱(cheng)作壓電(dian)陶瓷。硫酸(suan)(suan)(suan)鋰(li)(li)、鈮(ni)酸(suan)(suan)(suan)鋰(li)(li)、石英等(deng)為(wei)常用的(de)(de)(de)(de)(de)單晶(jing)(jing)(jing)材(cai)料(liao)(liao)(liao)。常用的(de)(de)(de)(de)(de)多(duo)(duo)(duo)(duo)晶(jing)(jing)(jing)材(cai)料(liao)(liao)(liao)有(you)鈦(tai)酸(suan)(suan)(suan)鋇、鈦(tai)酸(suan)(suan)(suan)鉛(qian)等(deng)。多(duo)(duo)(duo)(duo)晶(jing)(jing)(jing)體(ti)材(cai)料(liao)(liao)(liao)又(you)稱(cheng)為(wei)壓電(dian)陶瓷。其中(zhong)單晶(jing)(jing)(jing)體(ti)材(cai)料(liao)(liao)(liao)對(dui)接收更靈(ling)(ling)敏(min),多(duo)(duo)(duo)(duo)晶(jing)(jing)(jing)材(cai)料(liao)(liao)(liao)的(de)(de)(de)(de)(de)發射靈(ling)(ling)敏(min)度較高。
超(chao)(chao)聲(sheng)(sheng)(sheng)波(bo)(bo)(bo)換(huan)(huan)能(neng)器(qi)中(zhong)的(de)(de)(de)壓(ya)電(dian)(dian)(dian)(dian)(dian)晶片(pian)具有壓(ya)電(dian)(dian)(dian)(dian)(dian)效應(ying),可利(li)用超(chao)(chao)聲(sheng)(sheng)(sheng)換(huan)(huan)能(neng)器(qi)中(zhong)壓(ya)電(dian)(dian)(dian)(dian)(dian)芯片(pian)的(de)(de)(de)壓(ya)電(dian)(dian)(dian)(dian)(dian)效應(ying)實(shi)現超(chao)(chao)聲(sheng)(sheng)(sheng)波(bo)(bo)(bo)的(de)(de)(de)產生(sheng)(sheng)和接收。在(zai)壓(ya)電(dian)(dian)(dian)(dian)(dian)晶體(ti)(ti)兩側的(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)極通交流電(dian)(dian)(dian)(dian)(dian),通過逆壓(ya)電(dian)(dian)(dian)(dian)(dian)效應(ying)可知,晶片(pian)會(hui)在(zai)厚度方(fang)向產生(sheng)(sheng)伸縮的(de)(de)(de)機械(xie)振(zhen)動,將電(dian)(dian)(dian)(dian)(dian)能(neng)轉換(huan)(huan)成(cheng)聲(sheng)(sheng)(sheng)能(neng)(機械(xie)能(neng)),此時(shi)探頭便發(fa)射出超(chao)(chao)聲(sheng)(sheng)(sheng)波(bo)(bo)(bo),再通過合(he)適(shi)的(de)(de)(de)耦(ou)合(he)劑與待檢測工(gong)件(jian)連接,振(zhen)動產生(sheng)(sheng)的(de)(de)(de)超(chao)(chao)聲(sheng)(sheng)(sheng)波(bo)(bo)(bo)便進(jin)入了工(gong)件(jian)。當(dang)壓(ya)電(dian)(dian)(dian)(dian)(dian)晶片(pian)接收到(dao)超(chao)(chao)聲(sheng)(sheng)(sheng)波(bo)(bo)(bo)時(shi),受到(dao)聲(sheng)(sheng)(sheng)波(bo)(bo)(bo)能(neng)量的(de)(de)(de)激發(fa)便會(hui)產生(sheng)(sheng)振(zhen)動發(fa)生(sheng)(sheng)機械(xie)形變從而使晶體(ti)(ti)兩個(ge)表(biao)面產生(sheng)(sheng)大小相(xiang)同極性相(xiang)反的(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)荷,形成(cheng)超(chao)(chao)聲(sheng)(sheng)(sheng)波(bo)(bo)(bo)頻率(lv)的(de)(de)(de)高頻電(dian)(dian)(dian)(dian)(dian)壓(ya),超(chao)(chao)聲(sheng)(sheng)(sheng)波(bo)(bo)(bo)探傷儀的(de)(de)(de)接收電(dian)(dian)(dian)(dian)(dian)路正是通過對返(fan)回(hui)的(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)信號進(jin)行一系列處理從而判斷(duan)工(gong)件(jian)是否有傷。顯然,超(chao)(chao)聲(sheng)(sheng)(sheng)波(bo)(bo)(bo)換(huan)(huan)能(neng)器(qi)的(de)(de)(de)作(zuo)用是實(shi)現聲(sheng)(sheng)(sheng)能(neng)與電(dian)(dian)(dian)(dian)(dian)能(neng)的(de)(de)(de)相(xiang)互轉換(huan)(huan)。
壓(ya)電晶體分為單壓(ya)電晶體與多晶壓(ya)電陶瓷。其中,壓(ya)電陶瓷占有相當大(da)的比(bi)重,是(shi)市場上(shang)應用最為廣(guang)泛的壓(ya)電材料(liao)。分述(shu)如下:
a. 壓電單晶體: 石英(ying)、水(shui)溶性(xing)壓電晶體(酒石酸(suan)鉀(jia)鈉(na)、酒石酸(suan)乙烯二銨、酒石酸(suan)二鉀(jia)、硫(liu)酸(suan)鉀(jia)等)。
b. 多晶體壓(ya)(ya)(ya)電(dian)陶(tao)(tao)瓷: 鈦(tai)酸(suan)鋇壓(ya)(ya)(ya)電(dian)陶(tao)(tao)瓷、鋯(gao)鈦(tai)酸(suan)鉛(qian)系壓(ya)(ya)(ya)電(dian)陶(tao)(tao)瓷、鈮酸(suan)鹽(yan)系壓(ya)(ya)(ya)電(dian)陶(tao)(tao)瓷和鈮鎂酸(suan)鉛(qian)壓(ya)(ya)(ya)電(dian)陶(tao)(tao)為代(dai)表(biao)性的(de)壓(ya)(ya)(ya)電(dian)陶(tao)(tao)瓷。
3. 壓(ya)電單晶體
石英(ying)晶體(ti)性(xing)(xing)能(neng)(neng)穩定(ding),機械強度高,絕(jue)緣性(xing)(xing)能(neng)(neng)好(hao),但價格昂貴,壓電(dian)(dian)系數遠(yuan)低于(yu)(yu)壓電(dian)(dian)陶瓷,所以一般僅用(yong)于(yu)(yu)標準儀(yi)器或要求較高的(de)(de)傳感器。石英(ying)晶體(ti)諧振器具有很高的(de)(de)品質(zhi)因(yin)數和穩定(ding)性(xing)(xing),可用(yong)于(yu)(yu)對講機、電(dian)(dian)子手(shou)表(biao)、電(dian)(dian)視機、電(dian)(dian)子儀(yi)器等產品的(de)(de)諧振腔,如圖3.2所示為石英(ying)晶體(ti)的(de)(de)壓電(dian)(dian)模型。

此(ci)外(wai),酒(jiu)石(shi)酸(suan)鉀(jia)鈉(na)、酒(jiu)石(shi)酸(suan)乙烯二銨(an)、酒(jiu)石(shi)酸(suan)二鉀(jia)、硫酸(suan)鉀(jia)等水溶性壓(ya)電(dian)晶(jing)體(ti)是常見的(de)單晶(jing)壓(ya)電(dian)材料。目(mu)前,通過單晶(jing)化來提(ti)高多晶(jing)壓(ya)電(dian)陶瓷(ci)(如鈦(tai)酸(suan)鉛)的(de)壓(ya)電(dian)性能是壓(ya)電(dian)材料的(de)研究熱點之一。
4. 多(duo)晶體壓電陶瓷
多晶體(ti)壓(ya)電(dian)(dian)陶(tao)(tao)瓷(ci)是一種(zhong)具有(you)壓(ya)電(dian)(dian)效應的功(gong)能陶(tao)(tao)瓷(ci)材料,在高溫下將氧化(hua)物混合燒結(jie)(jie),可以實現機械能和電(dian)(dian)能的轉(zhuan)換(huan)。目前市(shi)場上常(chang)見的多晶體(ti)壓(ya)電(dian)(dian)陶(tao)(tao)瓷(ci)為鋯鈦酸(suan)鉛(PZT)系(xi)壓(ya)電(dian)(dian)材料。壓(ya)電(dian)(dian)材料的研究熱(re)點主要有(you):①. 低溫燒結(jie)(jie)PZT陶(tao)(tao)瓷(ci);②. 大功(gong)率(lv)高轉(zhuan)換(huan)效率(lv)的PZT壓(ya)電(dian)(dian)陶(tao)(tao)瓷(ci);③. 壓(ya)電(dian)(dian)復合材料;④. 無鉛壓(ya)電(dian)(dian)陶(tao)(tao)瓷(ci);⑤. 單晶化(hua)。如圖3.3所示為壓(ya)電(dian)(dian)陶(tao)(tao)瓷(ci)的發展歷史(shi)。

5. 壓電(dian)晶體的主要性(xing)能參數
a. 壓電應變常數 d33
壓電(dian)應變(bian)常數表示(shi)單(dan)位電(dian)壓作(zuo)用于壓電(dian)晶體時所產生的(de)應變(bian)大小,其表達式(shi)為
d33 = Δt/U
式中 Δt-晶片在厚度方向的形(xing)變量,單(dan)位為m(米);
U--施加在壓電晶片(pian)兩(liang)面的應力,單位為(wei)V(伏特)。
壓電應變常數d33是測量壓電晶體材料發射靈敏度的重要參數。d33值越大,發射性能越差,發射靈敏度越高。
b. 壓電電壓常數 g33
壓(ya)電(dian)電(dian)壓(ya)常數表示施加在壓(ya)電(dian)晶(jing)片上的單位應力所產生的壓(ya)電(dian)梯(ti)度大(da)小,其(qi)表達(da)式(shi)為
g33 = Up/P
式中 P-施加在壓電(dian)晶片兩面的應力,單(dan)位為N(牛(niu));
Up-晶片表面產生的電壓梯度,Up = U/t,單位為V/m(伏特/米)。
c. 介電常數(shu) ε
介電常數是表示絕緣能力特性的(de)一個系數,其表達式為(wei)
ε=C t/A
式中 C-電容(rong)器電容(rong);
t-電(dian)容器極板距離;
A-電容器極板(ban)面(mian)積(ji)。
由介電(dian)(dian)常數表達式(shi)可知,當電(dian)(dian)容(rong)(rong)器(qi)極板距離和面積一定時,介電(dian)(dian)常數ε越大(da),電(dian)(dian)容(rong)(rong)C越大(da),即電(dian)(dian)容(rong)(rong)器(qi)存儲電(dian)(dian)量(liang)越多(duo)。壓電(dian)(dian)晶體的ε應(ying)根據不同(tong)的用途來選取。超聲波(bo)檢測的壓電(dian)(dian)晶體,頻率(lv)要(yao)求高時,應(ying)小一些。由于ε小、C小,電(dian)(dian)容(rong)(rong)器(qi)充放電(dian)(dian)時間短,頻率(lv)高。反(fan)之,應(ying)該大(da)一些。
d. 機電耦合系數 K
機電耦(ou)合系數K,表示壓電材(cai)料(liao)機械能(neng)(聲能(neng))與(yu)電能(neng)的轉換效率,即
K= 轉(zhuan)換的能量/輸(shu)入的能量
對于正壓電效應,K=轉換(huan)的(de)電能(neng)(neng)(neng)/輸(shu)入的(de)機(ji)械能(neng)(neng)(neng)。對于負壓電效應,K=轉換(huan)的(de)機(ji)械能(neng)(neng)(neng)/輸(shu)入的(de)電能(neng)(neng)(neng)。
探頭晶片振動時,會產生厚度和徑向兩個方向的伸縮變形,因此機電耦合系數分為厚度方向Kt和徑向Kp。Kt大,探測靈敏度高;Kp大,低頻諧振波增多,發射脈沖變寬,導致分辨力降低,盲區增大。
e. 機械品質因子 θm
壓電晶片在諧振時儲存的機械能(neng)E與一個(ge)周期內損(sun)(sun)耗的能(neng)量E損(sun)(sun)之比稱為機械品質因子(zi)θm.
壓電晶片振動損耗的能量主要是內摩擦引起的。θm值對分辨率有較大的影響:θm值越大,表示損耗越小,晶片持續震動時間長,脈沖寬度大,分辨率低。反之,θm值越小,表示損耗越大,脈沖寬度小,分辨率就高。
f. 頻率常數Ni
由駐波理論可知,壓電(dian)晶片在高頻(pin)電(dian)脈沖激(ji)勵下產生共振(zhen)的條件是

這意味著壓電晶片厚度與固有頻率的乘積是一個常數,稱為頻率常數,用Ni表示。厚度一定,頻率常數大的晶片材料,其固有頻率高。晶片材料一定,頻率越高,厚度越小。
g. 居里溫度Tc
與磁性材料一樣,壓電材料的壓電效應與溫度有關。它只能在一定的溫度范圍內產生,超過這個溫度范圍,壓電效應就消失了。壓電材料的壓電效應消失的溫度稱為壓電材料的居里溫度,用Tc表示。例如,石英Tc=570℃,鐵酸鋇Tc=115℃.常見壓電材料性能參數見表3.1。

6. 壓電晶體的選用原(yuan)則
對于壓(ya)電超聲換能器(qi)采用的壓(ya)電晶片,其選用原則可參考如下(xia):
a. 性能指標(biao)適(shi)當,以(yi)滿足具體使(shi)用要(yao)求(qiu)為度量,不宜過分追(zhui)求(qiu)各項(xiang)性能的高指標(biao);
b. 工作性(xing)能(neng)要(yao)穩(wen)定、可靠;
c. 價格低(di)廉,加工方便。
超聲波換能器對(dui)晶片(pian)的(de)要求如下:
a. 機(ji)電耦合系數(shu)K較(jiao)大,以便獲得較(jiao)高的轉(zhuan)換(huan)效(xiao)率;
b. 機械品質因子θm較大,以便獲得較高的轉換效率;
c. 壓電應變常數d33和壓電電壓常數g33較大,以便獲得較高的發射和接收靈敏度;
d. 頻率常數Ni較大,介電常數ε較小,以便獲得較高的頻率;
f. 居里溫度Tc較高,聲阻抗 Z 適當。


 
		